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Stellenbeschreibung

What you will do

As an integral part of the GaN Epitaxy team, you will be responsible for the inline metrology on 200mm and 150mm GaN-on-Si Epi wafers to support GaN Epi wafer production and epitaxial process development. This includes but not limited to:

• Lead the selection, purchase and installation of metrology tools (XRD/XRR, bow measurement, defectivity, photoluminescence, AFM, optical microscopy, etc)
• Define the metrology strategy
• Set up and developing measurement recipes
• Release and maintaining the measurement recipes
• Analyse the measurement results and report internally
• Work in the wafer FAB and interacting with Epi team members, FAB engineers, etc
• Explore and evaluate new inline metrology techniques and tools with internal and external parties
• Collaborate with external research partners using advanced offline characterization techniques to perform scientific research on fundamental characteristics of GaN Epi material

What you will need

• Master's degree/PhD in physics, material sciences or in a similar engineering field
• Minimum 3 year of experience of characterization on III-N materials
• Understanding and experience of wide range of material characterization techniques (XRD/XRR, PL, microscopy, AFM, TEM, SEM, Hall, CV, defectivity, etc). Hands-on experience on inline characterization tools in a production environment is a plus.
• Understanding of GaN MOCVD process and GaN based power/RF electronic devices
• Report about your work to industrial partners, on international conferences, publish key results in scientific journals and turn new ideas into IP
• Experience working in dynamic semiconductor industry and the commercial demands placed on time to market with new process technologies
• Team player with a strong drive to achieve success
• Fluency in English, conversational German language skills
• Good communication skills, both verbal and in writing